A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed compared to a conventional (C-MOSFET) using numerical TCAD simulation. Due the (HJD) located at mesa region, reverse recovery time charge of IHP-MOSFET decreased by 62.5% 85.7%, respectively. In addition, high breakdown voltage (BV) low maximum oxide electric field (EMOX) could be achieved in introducing (PSR) that effectively disperses off-state. The device also exhibited 3.9 times lower gate-to-drain capacitance (CGD) than C-MOSFET due split-gate structure grounded PSR. As result, had electrically excellent static dynamic characteristics, Baliga’s figure merit (BFOM) frequency (HFFOM) were increased 37.1% 72.3%, Finally, switching energy loss 59.5% C-MOSFET.